3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Y. D. Lin, Y. T. Tang, S. S. Sheu, T. H. Hou, W. C. Lo, M. H. Lee, M. F. Chang, Y. C. King, C. J. Lin, H. Y. Lee, P. C. Yeh, H. Y. Yang, P. S. Yeh, C. Y. Wang, J. W. Su, S. H. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Fingerprint

Dive into the research topics of '3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx'. Together they form a unique fingerprint.

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science