37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

Wei kuo Huang, Shou chian Huang, Hsiao wen Chung, Yue ming Hsin, Jin wei Shi, Yung chung Kao, Jenn ming Kuo

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9 Scopus citations


In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55- μm wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB · Ω. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.

Original languageEnglish
Pages (from-to)1323-1325
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
StatePublished - 15 Jun 2006


  • Evanescently coupled [photodiode heterojunction bipolar transistor (ECPD/HBT)
  • Evanescently coupled photodiode (ECPD)
  • InP heterojunction bipolar transistor (HBT)
  • Optoelectronic integrated circuit (OEIC)


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