37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

Wei kuo Huang; Shou chian Huang; Hsiao wen Chung; Yue ming Hsin; Jin wei Shi; Yung chung Kao; Jenn ming Kuo

doi:10.1109/LPT.2006.876733

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

Wei kuo Huang, Shou chian Huang, Hsiao wen Chung, Yue ming Hsin, Jin wei Shi, Yung chung Kao, Jenn ming Kuo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55- μm wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB · Ω. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.

Original language	English
Pages (from-to)	1323-1325
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2006.876733
State	Published - 15 Jun 2006

Keywords

Evanescently coupled [photodiode heterojunction bipolar transistor (ECPD/HBT)
Evanescently coupled photodiode (ECPD)
InP heterojunction bipolar transistor (HBT)
Optoelectronic integrated circuit (OEIC)

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10.1109/LPT.2006.876733

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title = "37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode",

abstract = "In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55- μm wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB · Ω. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.",

keywords = "Evanescently coupled [photodiode heterojunction bipolar transistor (ECPD/HBT), Evanescently coupled photodiode (ECPD), InP heterojunction bipolar transistor (HBT), Optoelectronic integrated circuit (OEIC)",

author = "Huang, {Wei kuo} and Huang, {Shou chian} and Chung, {Hsiao wen} and Hsin, {Yue ming} and Shi, {Jin wei} and Kao, {Yung chung} and Kuo, {Jenn ming}",

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doi = "10.1109/LPT.2006.876733",

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T1 - 37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

AU - Huang, Wei kuo

AU - Huang, Shou chian

AU - Chung, Hsiao wen

AU - Hsin, Yue ming

AU - Shi, Jin wei

AU - Kao, Yung chung

AU - Kuo, Jenn ming

PY - 2006/6/15

Y1 - 2006/6/15

N2 - In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55- μm wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB · Ω. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.

AB - In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55- μm wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB · Ω. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.

KW - Evanescently coupled [photodiode heterojunction bipolar transistor (ECPD/HBT)

KW - Evanescently coupled photodiode (ECPD)

KW - InP heterojunction bipolar transistor (HBT)

KW - Optoelectronic integrated circuit (OEIC)

UR - http://www.scopus.com/inward/record.url?scp=33846969534&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.876733

DO - 10.1109/LPT.2006.876733

M3 - 期刊論文

AN - SCOPUS:33846969534

SN - 1041-1135

VL - 18

SP - 1323

EP - 1325

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

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Keywords

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