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3.1-10.6 GHz ultra-wideband RF receiver in 0.18 lm CMOS technology
Hwann Kaeo Chiou
, Hsien Jui Chen
Department of Electrical Engineering
Research output
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Contribution to journal
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Article
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peer-review
2
Scopus citations
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Dive into the research topics of '3.1-10.6 GHz ultra-wideband RF receiver in 0.18 lm CMOS technology'. Together they form a unique fingerprint.
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Keyphrases
CMOS Technology
100%
Low Noise Amplifier
100%
Ultra-wideband
100%
RF Receiver
100%
Mixer
75%
Cascode
50%
Shunt Feedback
50%
Inductors
25%
Noise Figure
25%
P1dB
25%
Third-order Intercept Point
25%
1-dB Compression Point
25%
Conversion Gain
25%
Interstage
25%
Impedance Matching
25%
Total Energy Consumption
25%
Input Impedance
25%
Feedback Technique
25%
Powers of 2
25%
Double Sideband
25%
Gm-stage
25%
Engineering
Low Noise Amplifier
100%
Ultra-Wideband
100%
Mixers (Machinery)
75%
Electric Power Utilization
25%
Measured Result
25%
Noise Figure
25%
Order Intercept Point
25%
Db Compression Point
25%
Broadening
25%
Conversion Gain
25%
Flatness
25%
Input Impedance
25%