27 GHz flip-chip assembled pHEMT oscillator

Yue Ming Hsin, Yu An Liu, Che Ming Wang, Wei Kuo Huang, Tsung Jung Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper, we present a microwave integrated circuit (MIC) with flip-chip assembled 0.15μm-gate pHEMT. Single transistor (pHEMT of 4×75 μm from WIN Semiconductor) with negative resistance combined with resonant network was designed for Ka-band oscillator. After characterizing the 0.15μm-gate pHEMT, the passive components and CPW connection were designed and fabricated on Al2O3 substrate with consideration of bump transition. The measured output signal was at 27.55 GHz while biasing at VDS = 2 V and ID = 50 mA (VGS = -0.5 V), respectively. The measured signal output power is 1.87 dBm with consideration of cable loss. The corresponding phase noise is -84 dBc/Hz@1MHz offset. To our knowledge, this is the 1st flip-chip assembled pHEMT oscillator using feedback methodology at Ka-band.

Original languageEnglish
Title of host publication2006 International Conference on Compound Semiconductor Manufacturing Technology
Pages127-129
Number of pages3
StatePublished - 2006
Event2006 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2006 - Vancouver, BC, Canada
Duration: 24 Apr 200627 Apr 2006

Publication series

Name2006 International Conference on Compound Semiconductor Manufacturing Technology

Conference

Conference2006 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2006
Country/TerritoryCanada
CityVancouver, BC
Period24/04/0627/04/06

Keywords

  • Flip-chip
  • MIC
  • Oscillator
  • PHEMT

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