@article{221774af4a4647798cba6bbb6165c98d,
title = "2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier",
abstract = "The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.",
author = "Y. Irokawa and B. Luo and Kang, {B. S.} and Jihyun Kim and LaRoche, {J. R.} and F. Ren and Baik, {K. H.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Park, {S. S.} and Park, {Y. J.}",
note = "Funding Information: The work at UF is partially supported by EPRI and NSF(CTS-0301178) monitored by Dr. M. Burka. The work at NCU is partially supported by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of ROC (NSC89-2215-E-008-031).",
year = "2004",
month = feb,
doi = "10.1016/S0038-1101(03)00323-X",
language = "???core.languages.en_GB???",
volume = "48",
pages = "359--361",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "2",
}