Abstract
A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.
| Original language | English |
|---|---|
| Article number | 6384719 |
| Pages (from-to) | 1286-1292 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Components, Packaging and Manufacturing Technology |
| Volume | 3 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2013 |
Keywords
- Bondwire loop
- complementary metal oxide semiconductor (CMOS)
- power added efficiency (PAE)
- power amplifier (PA)
- quality factor (Q)
- spiral inductor