1.6 A GaN Schottky rectifiers on bulk GaN substrates

J. W. Johnson, B. Lou, F. Ren, D. Palmer, S. J. Pearton, S. S. Park, Y. J. Park, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.

Original languageEnglish
Pages (from-to)911-913
Number of pages3
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 2002


  • Bulk substrate
  • GaN
  • HVPE
  • Rectifier
  • Schottky
  • Thermal package


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