1.6 A GaN Schottky rectifiers on bulk GaN substrates

J. W. Johnson; B. Lou; F. Ren; D. Palmer; S. J. Pearton; S. S. Park; Y. J. Park; J. I. Chyi

doi:10.1016/S0038-1101(01)00339-2

1.6 A GaN Schottky rectifiers on bulk GaN substrates

J. W. Johnson, B. Lou, F. Ren, D. Palmer, S. J. Pearton, S. S. Park, Y. J. Park, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Large area bulk GaN rectifiers with implanted p⁺ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm².

Original language	English
Pages (from-to)	911-913
Number of pages	3
Journal	Solid-State Electronics
Volume	46
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(01)00339-2
State	Published - Jun 2002

Keywords

Bulk substrate
GaN
HVPE
Rectifier
Schottky
Thermal package

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10.1016/S0038-1101(01)00339-2

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@article{018cb2d5658c4b4eae5f9bbae5b6e569,

title = "1.6 A GaN Schottky rectifiers on bulk GaN substrates",

abstract = "Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.",

keywords = "Bulk substrate, GaN, HVPE, Rectifier, Schottky, Thermal package",

author = "Johnson, {J. W.} and B. Lou and F. Ren and D. Palmer and Pearton, {S. J.} and Park, {S. S.} and Park, {Y. J.} and Chyi, {J. I.}",

note = "Funding Information: The work at UF is partially supported by NSF grant DMR 0101438.",

year = "2002",

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doi = "10.1016/S0038-1101(01)00339-2",

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volume = "46",

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TY - JOUR

T1 - 1.6 A GaN Schottky rectifiers on bulk GaN substrates

AU - Johnson, J. W.

AU - Lou, B.

AU - Ren, F.

AU - Palmer, D.

AU - Pearton, S. J.

AU - Park, S. S.

AU - Park, Y. J.

AU - Chyi, J. I.

N1 - Funding Information: The work at UF is partially supported by NSF grant DMR 0101438.

PY - 2002/6

Y1 - 2002/6

N2 - Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.

AB - Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.

KW - Bulk substrate

KW - GaN

KW - HVPE

KW - Rectifier

KW - Schottky

KW - Thermal package

UR - http://www.scopus.com/inward/record.url?scp=0036604577&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(01)00339-2

DO - 10.1016/S0038-1101(01)00339-2

M3 - 期刊論文

AN - SCOPUS:0036604577

SN - 0038-1101

VL - 46

SP - 911

EP - 913

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

1.6 A GaN Schottky rectifiers on bulk GaN substrates

Abstract

Keywords

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