15-60 GHz asymmetric broadside coupled balun in 0.18 μm CMOS technology

H. K. Chiou, T. Y. Yang, Y. C. Hsu, S. G. Lin, Y. Z. Juang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A 15-60GHz asymmetric broadside coupled balun fabricated in the standard TSMC 0.18m CMOS process is demonstrated. Using the broadside tight coupling technique, the balun is achieved with wide bandwidth and low insertion loss and utilises the inherent three-dimensional multilayer structure in CMOS technology. The balun achieves bandwidth of over 120, the minimum insertion loss is better than 1.1dB, amplitude difference is less than 1dB and phase difference is less than 5° (15-60GHz). The occupied chip area is only 0.06mm2.

Original languageEnglish
Pages (from-to)1028-1030
Number of pages3
JournalElectronics Letters
Volume43
Issue number19
DOIs
StatePublished - 2007

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