1.32 μm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition

Kun Fu Huang; Feng Ming Lee; Chih Wei Hu; Te Chin Peng; Meng Chyi Wu; Chia Chien Lin; Tung Po Hsieh; Jen Inn Chyi

doi:10.1116/1.2221316

1.32 μm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition

Kun Fu Huang, Feng Ming Lee, Chih Wei Hu, Te Chin Peng, Meng Chyi Wu, Chia Chien Lin, Tung Po Hsieh, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

Abstract

The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 μm at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemical vapor deposition. The bottom and top mirrors of QD RCLEDs were fabricated by employing epitaxial AlGaAs/GaAs pairs and one dielectric SiO₂/Si₃N₄ pair as distributed Bragg reflectors (DBRs), respectively. As compared to the nonresonant QD LEDs, the RCLEDs exhibit a forward voltage of 1.13 V at 20 mA, a peak wavelength of 1.318 μm, a narrower full width at half maximum in the electroluminescent spectrum of 14 meV at 20 mA, a high Q factor of 73.9, a low redshift rate with injection current of 0.033 nm/mA, and a higher light-output power of 28 μW at 100 mA.

Original language	English
Pages (from-to)	1922-1924
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	4
DOIs	https://doi.org/10.1116/1.2221316
State	Published - Jul 2006

Access to Document

10.1116/1.2221316

Cite this

@article{3a092a80185f441fbadd4f9ea313ada3,

title = "1.32 μm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition",

abstract = "The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 μm at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemical vapor deposition. The bottom and top mirrors of QD RCLEDs were fabricated by employing epitaxial AlGaAs/GaAs pairs and one dielectric SiO2/Si3N4 pair as distributed Bragg reflectors (DBRs), respectively. As compared to the nonresonant QD LEDs, the RCLEDs exhibit a forward voltage of 1.13 V at 20 mA, a peak wavelength of 1.318 μm, a narrower full width at half maximum in the electroluminescent spectrum of 14 meV at 20 mA, a high Q factor of 73.9, a low redshift rate with injection current of 0.033 nm/mA, and a higher light-output power of 28 μW at 100 mA.",

author = "Huang, {Kun Fu} and Lee, {Feng Ming} and Hu, {Chih Wei} and Peng, {Te Chin} and Wu, {Meng Chyi} and Lin, {Chia Chien} and Hsieh, {Tung Po} and Chyi, {Jen Inn}",

note = "Funding Information: The financial support from the National Science Council (NSC 94-2215-E-007-011) and Advanced Technology Research Laboratory, Telecommunication Laboratories, Chunghwa Telecom Co., Ltd., is deeply appreciated.",

year = "2006",

month = jul,

doi = "10.1116/1.2221316",

language = "???core.languages.en_GB???",

volume = "24",

pages = "1922--1924",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

}

TY - JOUR

T1 - 1.32 μm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition

AU - Huang, Kun Fu

AU - Lee, Feng Ming

AU - Hu, Chih Wei

AU - Peng, Te Chin

AU - Wu, Meng Chyi

AU - Lin, Chia Chien

AU - Hsieh, Tung Po

AU - Chyi, Jen Inn

N1 - Funding Information: The financial support from the National Science Council (NSC 94-2215-E-007-011) and Advanced Technology Research Laboratory, Telecommunication Laboratories, Chunghwa Telecom Co., Ltd., is deeply appreciated.

PY - 2006/7

Y1 - 2006/7

N2 - The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 μm at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemical vapor deposition. The bottom and top mirrors of QD RCLEDs were fabricated by employing epitaxial AlGaAs/GaAs pairs and one dielectric SiO2/Si3N4 pair as distributed Bragg reflectors (DBRs), respectively. As compared to the nonresonant QD LEDs, the RCLEDs exhibit a forward voltage of 1.13 V at 20 mA, a peak wavelength of 1.318 μm, a narrower full width at half maximum in the electroluminescent spectrum of 14 meV at 20 mA, a high Q factor of 73.9, a low redshift rate with injection current of 0.033 nm/mA, and a higher light-output power of 28 μW at 100 mA.

AB - The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 μm at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemical vapor deposition. The bottom and top mirrors of QD RCLEDs were fabricated by employing epitaxial AlGaAs/GaAs pairs and one dielectric SiO2/Si3N4 pair as distributed Bragg reflectors (DBRs), respectively. As compared to the nonresonant QD LEDs, the RCLEDs exhibit a forward voltage of 1.13 V at 20 mA, a peak wavelength of 1.318 μm, a narrower full width at half maximum in the electroluminescent spectrum of 14 meV at 20 mA, a high Q factor of 73.9, a low redshift rate with injection current of 0.033 nm/mA, and a higher light-output power of 28 μW at 100 mA.

UR - http://www.scopus.com/inward/record.url?scp=33746545137&partnerID=8YFLogxK

U2 - 10.1116/1.2221316

DO - 10.1116/1.2221316

M3 - 期刊論文

AN - SCOPUS:33746545137

SN - 1071-1023

VL - 24

SP - 1922

EP - 1924

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

1.32 μm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition

Abstract

Access to Document

Fingerprint

Cite this