In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 2003|
|Event||2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States|
Duration: 12 May 2003 → 16 May 2003