1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

T. P. Hsieh; N. T. Yeh; P. C. Chiu; K. F. Huang; W. C. Ho; M. C. Wu; J. I. Chyi

1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

T. P. Hsieh, N. T. Yeh, P. C. Chiu, K. F. Huang, W. C. Ho, M. C. Wu, J. I. Chyi

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH₃ as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In_0.25Ga_0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.

Original language	English
Pages (from-to)	456-459
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2003
Event	2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States Duration: 12 May 2003 → 16 May 2003

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title = "1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition",

abstract = "In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.",

author = "Hsieh, {T. P.} and Yeh, {N. T.} and Chiu, {P. C.} and Huang, {K. F.} and Ho, {W. C.} and Wu, {M. C.} and Chyi, {J. I.}",

year = "2003",

language = "???core.languages.en_GB???",

pages = "456--459",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "2003 International Conference Indium Phosphide and Related Materials ; Conference date: 12-05-2003 Through 16-05-2003",

}

TY - JOUR

T1 - 1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

AU - Hsieh, T. P.

AU - Yeh, N. T.

AU - Chiu, P. C.

AU - Huang, K. F.

AU - Ho, W. C.

AU - Wu, M. C.

AU - Chyi, J. I.

PY - 2003

Y1 - 2003

N2 - In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.

AB - In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=0038825120&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0038825120

SN - 1092-8669

SP - 456

EP - 459

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2003 International Conference Indium Phosphide and Related Materials

Y2 - 12 May 2003 through 16 May 2003

ER -

1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Abstract

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