1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal organic chemical vapor deposition

K. F. Huang, T. P. Hsieh, N. T. Yeh, W. J. Ho, J. I. Chyi, M. C. Wu

Research output: Contribution to journalConference articlepeer-review

Abstract

Systematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume775
StatePublished - 2003
EventSelf-Assembled Nanostructured Materials - San Francisco, CA, United States
Duration: 22 Apr 200325 Apr 2003

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