1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

E. Ray Hsieh, Yu Ming Luo, Yi Xiang Huang, Huan Shiang Su, Rui Qi Lin, Yu Hsien Lin, Kai Hsiang Chang, Ting Ho Shen, Chuan Hsi Liu

Research output: Contribution to journalArticlepeer-review


We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 (0.0502 μm2), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIEEE Electron Device Letters
StateAccepted/In press - 2023


  • Avalanche-breakdown
  • Dielectrics
  • Electric breakdown
  • Embedded memory
  • FinFETs
  • Impact-ionization
  • Junctions
  • Logic gates
  • One-time-programmable (OTP) memory
  • Programming
  • Voltage


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