Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.
|State||Published - 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|