0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography

Chu Dong Chen; Shiow Jen Chen; Yuan Tzay Chen; Tien Min Chuang; Ming Fon Huang; Feng Yuh Juang; Chung Chi Chang; Yi Jen Chan; Jen Inn Chyi

doi:10.1109/EDMS.1994.771265

0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography

Chu Dong Chen, Shiow Jen Chen, Yuan Tzay Chen, Tien Min Chuang, Ming Fon Huang, Feng Yuh Juang, Chung Chi Chang, Yi Jen Chan, Jen Inn Chyi

Research output: Contribution to conference › Paper › peer-review

Abstract

Al_0.2Ga_0.8As/In_0.25Ga_0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of f_T = 36 GHz and maximum osculation frequency of f_max=93 GHz.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771265
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771265

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@conference{3d2c03df1fb04bd3b8a556ff3a02ce7e,

title = "0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography",

abstract = "Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.",

author = "Chen, {Chu Dong} and Chen, {Shiow Jen} and Chen, {Yuan Tzay} and Chuang, {Tien Min} and Huang, {Ming Fon} and Juang, {Feng Yuh} and Chang, {Chung Chi} and Chan, {Yi Jen} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771265",

language = "???core.languages.en_GB???",

}

TY - CONF

T1 - 0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography

AU - Chen, Chu Dong

AU - Chen, Shiow Jen

AU - Chen, Yuan Tzay

AU - Chuang, Tien Min

AU - Huang, Ming Fon

AU - Juang, Feng Yuh

AU - Chang, Chung Chi

AU - Chan, Yi Jen

AU - Chyi, Jen Inn

PY - 1994

Y1 - 1994

N2 - Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.

AB - Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.

UR - http://www.scopus.com/inward/record.url?scp=85063590495&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771265

DO - 10.1109/EDMS.1994.771265

M3 - 會議論文

AN - SCOPUS:85063590495

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography

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