Using Dark-Field Microscope System to Real-Time Monitoring of Single Crystal Graphene Growth by the Rapid Thermal Processing System

Graphene is the most promising material in the world. Using chemical vapor deposition to growgraphene has advantage in the future application of the transparent electrode. But graphene grow bypolycrystalline copper foil will cause the lattice of graphene mismatch. The grain of graphene have differentrotation angle increase the defects and decrease the conductivity. Beside, traditional high-temperaturefurnace as to heat up too slow to increase the copper surface roughness and decrease the quality of graphene.After the growth of graphene only can use atomic force microscope (AFM), scanning electron microscope(SEM), and transmission electron microscopy (TEM) to observe the graphene grains. It is not real observethe growth of graphene, we can’t understand various process gas affect.Therefore, this project proposes the use of a sputtering system to deposit single-like crystal copper (111)film on a sapphire substrate, and use the rapid thermal processing (RTP) system to transfer single-likecrystal copper (111) film to single crystal copper (111) film. Using dark-field microscope observationsystem to monitor the growth of graphene grain and adjust process parameters in the growth process. Themobility of graphene greater than 2000 cm2 / Vs, the 550 nm transmittance of greater than 95%, and sheetresistance of less than 300 Ω / □.