Thermoelectric Prototype by Bi2te3/Si Composite Thick Film(2/2)

The research plan will propose an efficient thermal management strategy for the waste heat scavenging andchip cooling at low temperature (below 200℃), as well as the fabrication process and development ofthermoelectric device. This project focuses on the research and development of the Bi2Te3 thermoelectricthick film, production capability, as well as device efficiency test/analysis. For contemporary commercializedthermoelectric materials, there is no viable candidate for waste heat scavenging by thermoelectric conversionat large scale below low temperature range (from room temperature to 200 ℃). If the cost of materials anddevices can be significantly reduced, it must be an important energy issue for waste heat scavenging. Theproposed solution in this project is the development and use of composite materials process for theproduction of Bi2Te3/Si thermoelectric composite materials.Based on the aspect of practical applications in future industries and thermal conversion efficiency, thisproject has proposed composite Bi2Te3/Si thermoelectric device, including: (1) development of thickcomposite film with 50 ~ 100μm thickness; (2) the diffusion barrier of interconnect and the reliability test; (3)the package of thermoelectric device and (4) measurement of ZT of composite thermoelectric materials andevaluation on low temperature waste heat scavenging. Our research project will demonstrate the potentialapplications of Bi2Te3/Si comopsite as low temperature thermoelectrics through process innovation andintegration.This project is aimed at the thermoelectric device suitable for industrial waste heat scavenging with the helpof measurement platform built in our lab, as well as reports of cost and efficiency based on our experimentalresults. In the next two years, we will not only improve its technical level and cost-benefit of the product, butalso obtain thermoelectric-related researchers and engineers.