Along with the aim of further shrinkage of devices, the deposition of improved quality Nano-film with peculiar features such as uniform, conformal, thickness control and compactness has been a critical challenge to the microsemiconductor industry. Tremendous interest has been focused on atomic layer deposition (ALD) as a thin film deposition technique capacity to deposit the desired quality. However, further comprehension of the ALD process is mandatory in order to increase the probability of the industry in achieving the necessary improvement, which can have a substantial impact on devices’ required properties such as size, performance, durability. It has been reported that higher pressure tends to increase the growth per cycle. However, little has been done to investigate the specific effects of the operation pressure on the mechanistic, species transport and reaction rates. Moreover, the effects on these prior properties due to the change of pressure on a substrate with complex topology elements, such as microtrenches and field-effect transistor, has not been evaluated. Hence, this study focuses to numerically investigate the effect between one and 10 torr operating pressure along the ALD process using the computational fluid dynamic approach. A two-dimensional numerical simulation of the Al2O3 ALD thin film fabrication process over a surface with micro-trenches on a substrate is studied. Trimethyl-Aluminium and Ozone were utilized as the metal and oxidation source reactants. To assist the precursor reaction process, a 2.5 second exposure time is added within the ALD sequence. The findings illustrated the fluid flow velocity, surface coverage, mass fraction, deposition rate and growth of the thin-film process. The evaluations unveil a close comparison to experimental work.
|Effective start/end date||1/08/20 → 31/07/21|
UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):
- Atomic layer deposition
- Numerical simulation
- Computational Fluid Dynamics
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