2D materials haveattractedmuch attentionsrecently.It have been regarded as frontier electronic materials in the future due to its superior electronic transportproperties and mechanical flexibility, which make it potential for high performance and wearable electronics. Graphene is a typical 2D materials with high carrier mobility, however, it still can't be applied in logic device due to the lack of bandgap. Recently, a novel 2D material- atomic layered back phosphorus(so-called Phosphorene) have been discovered, its electronic properties,including direct bandgap(~2 eV)、high carrier mobility、on-off ratio, are superior than other reported 2D materials(MoS2、WS2、MoSe2 etc.). It is a raising topic to investigate the condensed physics of phosphorene. However, there still some issuesrequired to beaddress before going to particleapplications: (1)Degradation when it was exposed to air atmosphere. (2). There still lack of technology for large area synthesis of phosphorene.In this project, we plane to address these two issues and also investigate the fundamental properties of this materials. The 1st year plane including: (1) improve the surface degradation bysmall molecularprotection and ALD formal layer onas-prepared phosphorene.(2) Improving the contact resistance issue of phosphorene-based transistor. The 2ed year plane is mainly on large-scale growth of phosphorene film by CVD approach. The 3rd year plane is the proof-of concept device fabrications, this including (1) phosphorene device based on CVD-grown film : the transistor fabrications and characterizations. (2) logic device(CMOS inventor) and optical electronics(photosensor and diode): heterostructure fabrications and device applications.
|Effective start/end date||1/08/16 → 31/07/17|
UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):
- Field Effect Transistor
- Band Gap
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