Study on Bonding Wafers with Hydrogen Bonds on Surface

With the development of self-driving electric vehicles combined with AI artificial intelligence and Internet of Things technology, and because the US Congress passed a budget of 12 trillion US dollars for the infrastructure construction of electric vehicles in 2021, the production of related devices has become the core of high-tech industry development. This investment project strongly drives the research and development of power energy management chips, 5G communication frequency and bandwidth improvement, artificial intelligence core chips, IoT sensors, connected sensors for electric vehicle driving, and unmanned smart devices. Because these high frequency, high power, high telecommunication transmission rate components consume far more energy than previous products, and all kinds of energy must be converted into electric energy before they can be used, so the power management chip is very important. Silicon carbide has become the preferred material for power management chip manufacturing due to its wide energy gap material properties and high compatibility with existing silicon crystal material processing and manufacturing technologies and processes. On the other hand, due to its high strain-resistant mechanical properties, strong dielectric coefficient, excellent thermal conductivity, and high etching resistance, aluminum nitride materials have become the first choice for carrying wafers. This research is in the field of semiconductor wafer bonding technology, and the surface of silicon carbide and aluminum nitride to be bonded is modified to produce high hydrogen bond density, so as to develop low temperature technology for bonding silicon carbide/aluminum nitride materials, for example Demand for the development and research of regenerative conversion nitride wafer materials. In this study, the designed plasma will be treated with silicon carbide and aluminum nitride. It is expected that hydrogen bonds will be generated after the surfaces are in contact, resulting in a strong attraction to generate a bonding process, and then a low-temperature heat treatment will further form chemical bonds, enhancing Bond strength, so that the two surfaces are in close contact with each other. The experimental process also includes the preparation of samples, and the analysis of high-resolution electron microscope, XPS, FTIR infrared spectrometer, etc., to explore the bonding mechanism of materials, and hope to establish a foundation for the design of related components of silicon carbide/aluminum nitride bonded wafer materials.