Study in the Next-Generation Magnetic Memory with the High Field-Like Spin Torque Effect

Project Details


In most semiconductor-based and conventional MgO-based MTJs, the fact of STT>> FLST rendersthe remarkable progress in STT writing technology in the so-called STT-MRAM, where spin-transfer(STT) and the field-like (FLST) are two components of the spin torque effect. The main challenge forimplementing STT writing mode is the substantial reduction of the intrinsic current density. Therefore,alternative writing and reading mechanisms for MTJs may provide a viable route towards switchingenergies per bit close to or smaller compared with CMOS (~1 fJ). The recently proposed dual control ofgiant FLST in spin-filter-based SF-MTJ provide a new avenue to achieve both ‘reading’ and ‘writing’processes of nonvolatile FLST-MRAM, which may require lower critical current densities formagnetization switching and faster writing and reading speeds than the conventional STT-MRAM.However, as far as we know, such SF-MTJ has been overlooked and less has been done no mattertheoretically or experimentally. In this project, we’ll focus on searching for the novel SF-MTJs bychoosing (i) 1,4-Benzenediamine (BDA) with dissociated amine-linker and (ii) EuO as the centralSF-barrier. The first-principles calculation with the non-equilibrium Green’s function (NEGF) methodwill be combined with the tight-binding model to investigate their FLST effects. We believe that ourtheoretical investigations on such SF-MTJ with tremendous potential may open a new avenue for newtype of non-volatile FLST-MRAM.
Effective start/end date1/08/1731/07/18


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