Research on Charge-Accumulation Effect of Schottky Barrier on Electrochemistry to Develop the Technology of Anodizing N-Type Silicon in the Dark(1/2)

Project Details


The electrochemical anode process of the crystal material with hydrofluoric acid as the electrolyte can form a porous tantalum layer, and the structure containing the nanocrystal grains is also found at the etching node. Therefore, in the photoluminescence experiment, the pores of different pore sizes are excited differently. Wavelength of light. According to the principle of quantum limitation, this is due to the difference in grain size of nanocrystals. The main carrier type electron of the N-type germanium substrate, and the mobility of electrons is three times higher than that of the hole, and therefore is a very important material for a light-emitting element which is a photonic material. Based on the Schottky junction structure, this study designs an electron mechanism in the discharge substrate to greatly increase the density of the holes in the substrate, which leads to the formation of a porous layer on the surface of the hydrofluoric acid etched twin. In the development of N-type porous tantalum material technology in the darkroom, it is expected that the following objectives can be achieved after obtaining research results: (1) Replacing the coating process with recycled hydrophobic wafer bonding technology to achieve environmental protection. (2) Replace the halogen lamp illumination step with the Schottky diode structure to improve energy efficiency and process cost. (3) Academic theory: Invert the concept of N-type porous tantalum formation, propose to apply the Schottky junction working principle to change the electrical properties of the substrate, and expand the use of electrochemical technology. (4) Exploring the method of making N-type porous tantalum in a dark room, greatly reducing the possibility that external light energy interferes with the etching reaction, and it is expected to develop into an industrial technology for producing excellent nanocrystalline materials, and (5) Research on hydrophobic modification of silicon nanocrystals to prepare raw materials for silicon photonics and greatly expand industrial applicability.
Effective start/end date1/08/1931/07/20

UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 12 - Responsible Consumption and Production
  • SDG 17 - Partnerships for the Goals


  • Silicon Nanocrystals
  • Porous Silicon
  • Electrochemical Etching
  • Wafer Bonding
  • Schottky Junction


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