Skip to main navigation
Skip to search
Skip to main content
National Central University Home
Help & FAQ
English
中文
Home
Scholar Profiles
Research units
Projects
Research output
Datasets
Prizes
Activities
Press/Media
Impacts
Search by expertise, name or affiliation
Numerical Investigations of Impurity Transport Control during the Single Silicon Crystal Growth Process by Czochralski Method(2/2)
陳, 志臣
(PI)
Department of Mechanical Engineering
Overview
Fingerprint
Research output
(1)
Project Details
Status
Finished
Effective start/end date
1/08/19
→
31/07/20
View all
View less
Keywords
Czochralski Crystal Growth
Silicon Crystal
Numerical Simulation
Fluid
Heat
and Mass Transport
Impurity Control
Fingerprint
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.
Crucibles
Engineering & Materials Science
100%
crucibles
Physics & Astronomy
83%
cusps
Physics & Astronomy
81%
heat transmission
Physics & Astronomy
81%
Heat Transfer
Chemical Compounds
81%
Crystals
Engineering & Materials Science
74%
Magnetic Field
Chemical Compounds
70%
Magnetic fields
Engineering & Materials Science
65%
Research output
Research output per year
2020
2020
2020
1
Article
Research output per year
Research output per year
Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt
Nguyen, T. H. T.
,
Chen, J. C.
,
Hu, C.
&
Chen, C. H.
,
1 Feb 2020
,
In:
Journal of Crystal Growth.
531
, 125373.
Research output
:
Contribution to journal
›
Article
›
peer-review
Crucibles
100%
crucibles
83%
cusps
81%
heat transmission
81%
Heat Transfer
81%
4
Scopus citations