Monolithic Heterogeneous Integration of n-(In,Ga)As and p-Ge Channel CMOS FinFETs(3/3)

Research output

Research output per year 2019 2019 2020 2020

• 2 Article

Research output per year

Research output per year

Search results

• 2020

  The Influence of Superlattice Structure on the Dynamic Buffer Response of AlInN/GaN-on-Si HEMTs

  Chen, Y. C., Sanyal, I., Hu, T. Y., Ju, Y. H. & Chyi, J. I., 2020, In: IEEE Transactions on Nanotechnology. 19, p. 415-420 6 p., 9091104.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Electric breakdown 97%
  • Charge trapping 90%
  • Electron injection 45%
  • Silicon 45%
  2 Scopus citations
• 2019

  Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties

  Sanyal, I., Lee, Y. C., Chen, Y. C. & Chyi, J. I., 3 Jun 2019, In: Applied Physics Letters. 114, 22, 222103.

  Research output: Contribution to journal › Article › peer-review

  • electron mobility 100%
  • transport properties 77%
  • thermodynamics 65%
  • electrons 41%
  • atoms 32%
  4 Scopus citations