Keyphrases
Monolithic Heterogeneous Integration
100%
Ge Channel
100%
Fin Field-effect Transistor (FinFET)
100%
InGaAs
100%
Transistor Technology
50%
Integrated Circuits
50%
Hybrid CMOS
25%
N-channel MOSFET
25%
InGaAs FinFET
25%
Epitaxial Growth Mechanism
25%
Growth Quality
25%
Revolutionary Change
25%
CMOS Inverter
25%
Monolithically Integrated
25%
Monolithic Integration
25%
Ring Oscillator
25%
Patterned Substrate
25%
Clock Frequency
25%
Process Parameters Influence
25%
First Year
25%
Transistor
25%
High Electron Mobility
25%
P-channel
25%
Si Substrate
25%
Process Integration
25%
Selective Growth
25%
High Hole Mobility
25%
Transistor Count
25%
Device Characteristics
25%
Enhancement-mode (E-mode)
25%
Channel Material
25%
Growth Technology
25%
Material Quality
25%
Power Density
25%
Current Density
25%
Engineering
Indium Gallium Arsenide
100%
Nanoscale
40%
Integrated Circuit
40%
Process Integration
20%
Power Density
20%
Material Quality
20%
Si Substrate
20%
Growth Mechanism
20%
Process Parameter
20%
Clock Frequency
20%
Monolithic Integration
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Inverter
20%
Oscillator
20%