Keyphrases
Annealing
64%
GaN-based LED
63%
Region Effect
58%
Photocurrent Generation
58%
Annealing Atmosphere
58%
CO Gas
58%
Pt-TiO2
58%
Space Charge Region
58%
Surface Space Charge
58%
Chemical Effect
58%
Chemical Additives
58%
Soldering
58%
Photodiode
58%
Surface Corrosion
58%
Electroplating Bath
58%
SnO2
58%
Corrosion Resistance
58%
AlN Buffer Layer
58%
P-n Junction
58%
Solid State
58%
Ag3Sn
58%
Ni-P
58%
N2 Gas Flow
58%
Ni-P Layer
58%
InGaN Quantum Wells
58%
Surface Morphology
58%
Annealing Effect
58%
Crystal Quality
58%
Flow Surface
58%
Internal Electrical Field
58%
TiO2 Thin Film
48%
AlN Film
46%
Forward Voltage
38%
Ni Dissolution
32%
Low Temperature
29%
Mechanism Efficiency
29%
Packaging Process
29%
CuPd
29%
Diffusion Bonding
29%
O2 Partial Pressure
29%
P-type
29%
Flat Band
29%
Yellow Emission
29%
Quantum Efficiency
29%
Organic-inorganic
29%
Gallium Nitride
29%
F8T2
29%
Thiourea
26%
N2 Atmosphere
21%
Solder Mask
21%
Electroless Ni-P Plating
21%
Stress-free
19%
Voltage Change
19%
Reverse Bias
19%
Photocarriers
17%
N2 Annealing
17%
Annealing Temperature
16%
Plating Solution
15%
Ni3S4
12%
Radial Growth
12%
Activation Energy
12%
Solute
12%
Sn Solder
12%
Interfacial Layer
12%
Valence Band
12%
Light-emitting Devices
12%
III-nitrides
11%
Surface Roughness
11%
Glass Substrate
11%
Nitrided Layer
11%
Outgassing
11%
Surfactant
10%
Impurities
10%
P Content
10%
Voltage Measurement
9%
Flat-band Voltage
9%
Linear Relation
9%
Defect Reaction
9%
Ti2+
9%
As-deposited
9%
Biased Voltage
9%
Relaxation Time
9%
Magnetron Sputtering Deposition
9%
Compressive Stress
9%
Conduction Mechanism
9%
Lift-off
9%
Low Resistivity
9%
Pulse Mode
9%
Internal Quantum Efficiency
9%
Rutile
9%
Diode Characteristics
9%
Substitution Reaction
9%
I-V Curve
9%
Photolithography
9%
Band Gap
9%
DC Reactive Magnetron Sputtering
9%
Seebeck Effect
9%
Tensile Stress
9%
Ti4+
9%
Reaction Mechanism
9%
Quantum Well
9%
Turn-on Voltage
9%
Bonding Temperature
9%
3D IC
9%
Wafer Bonding Technology
9%
External Stress
9%
Bonding Interface
9%
Wafer Bonding
9%
Bonding Process
9%
Hole Carriers
8%
Potential Barrier
8%
Sn Vacancies
6%
Growth Equation
6%
Ni Wire
6%
Potential Enhancement
6%
In-Sn
6%
Vacancy Concentration
6%
Grain Boundary
6%
Ag Content
6%
Enhancement Mechanism
6%
High Density
6%
Screw Dislocation
5%
Step-terrace Structure
5%
UV Photodetector
5%
Rocking Curve
5%
Electrical Potential
5%
Oxygen Vacancy Concentration
5%
High Thermals
5%
High-flow Oxygen
5%
Thick Film
5%
Thick Layer
5%
Surface Oxidation
5%
Thermal Decomposition
5%
Dislocation Density
5%
As-grown
5%
Oxygen Atmosphere
5%
Surface Layer
5%
Large Volume
5%
Close-enough
5%
High Mobility
5%
Corrosion Degree
5%
Co-deposition
5%
Leaching
5%
Corrosion
5%
Stabilizer
5%
Co-deposits
5%
Negative Effects
5%
Engineering
Quantum Well
63%
Forward Voltage
58%
Space Charge Region
58%
Photocurrent
58%
Crystal Quality
58%
Buffer Layer
58%
Internals
58%
Surface Morphology
58%
Gas Flow
58%
Photodiode
58%
Electric Field
58%
Quantum Efficiency
29%
Low-Temperature
29%
Diffusion Bonding
29%
Nitride
29%
Led Packaging
29%
Reverse Bias
29%
Nitride Layer
29%
Max
29%
External Stress
19%
Three Dimensional Integrated Circuits
19%
Bonding Process
19%
Bonding Temperature
19%
Bonding Technology
19%
Wafer Bonding
19%
Glass Substrate
19%
Emitting Device
14%
Valence Band
14%
Original Surface
14%
Transition Point
14%
Internal Quantum Efficiency
14%
Dislocation Density
14%
Tensiles
14%
Compressive Stress
14%
Tensile Stress σ
14%
Electrical Measurement
14%
Relaxation Time
14%
Screw Dislocation
14%
Surface Layers
14%
Oxygen Vacancy
9%
Experimental Result
9%
Thick Layer
9%
Experimental Observation
9%
Electrical Potential
9%
Photometer
9%
Interdiffusion
9%
Preferred Orientation
9%
Key Process
9%
Residual Stress
9%
Diffusion Barrier
9%
Intermetallics
9%
Luminaires
9%
Material Science
Surface (Surface Science)
100%
Indium Tin Oxide
58%
Corrosion Resistance
58%
Activation Energy
58%
Plating
58%
Titanium Dioxide
58%
Theoretical Calculation
58%
Gas Flow
58%
Aluminum Nitride
58%
Buffer Layer
58%
Surface Morphology
58%
Light-Emitting Diode
34%
Density
33%
Film
33%
Gallium Nitride
29%
Electronic Circuit
29%
Grain Boundaries
29%
Thin Films
26%
Annealing
24%
Intermetallics
14%
Residual Stress
14%
Electroplating
14%
Grain Size
14%
Surface Active Agent
12%
Corrosion
12%
Thick Films
11%
Oxygen Vacancy
11%
Electroluminescence
9%
Nitride Compound
8%
Surface Roughness
8%
Stabilizer (Agent)
6%
Magnetron Sputtering
5%
Current-Voltage Characteristic
5%
Electrical Resistivity
5%