InAlGaN四元化合物半導體之超高頻電晶體開發

Project Details

Description

In response to the needs of the wide bandwidth of next generation mobile communications, the carrier frequency has to be shifted to millimeter-wave and above. The power amplifier with higher efficiency and power density are desired for the base stations. As GaN has a large bandgap, high breakdown field, and high electron saturation velocity, it is considered a good candidate for the power transistor in the power amplifiers. Compared with the most common AlGaN/GaN high electron transistors (HEMTs), the quaternary InAlGaN/GaN counterpart can overcome issues of low spontaneous polarization field and excessively thick barrier layer, which impede the realization of ultra-short channel field-effect transistors. The quaternary InAlGaN barrier can also reduce material defects, increase carrier mobility, and offer higher two-dimensional electron gas (2DEG) concentration. This objective of this project is to grow InAlGaN/GaN HEMT heterostructures on 6-inch Si substrates and 4/6-inch SiC substrates by metal-organic chemical vapor deposition (MOCVD). The epiwafers will be delivered for developing ultra-high frequency transistors.
StatusFinished
Effective start/end date1/01/2131/12/21

UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):

  • SDG 9 - Industry, Innovation, and Infrastructure

Keywords

  • GaN
  • InAlGaN
  • MOCVD
  • HEMTs

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