InAlGaN四元化合物半導體之超高頻電晶體開發

In response to the needs of the wide bandwidth of next generation mobile communications, the carrier frequency has to be shifted to millimeter-wave and above. The power amplifier with higher efficiency and power density are desired for the base stations. As GaN has a large bandgap, high breakdown field, and high electron saturation velocity, it is considered a good candidate for the power transistor in the power amplifiers. Compared with the most common AlGaN/GaN high electron transistors (HEMTs), the quaternary InAlGaN/GaN counterpart can overcome issues of low spontaneous polarization field and excessively thick barrier layer, which impede the realization of ultra-short channel field-effect transistors. The quaternary InAlGaN barrier can also reduce material defects, increase carrier mobility, and offer higher two-dimensional electron gas (2DEG) concentration. This objective of this project is to grow InAlGaN/GaN HEMT heterostructures on 6-inch Si substrates and 4/6-inch SiC substrates by metal-organic chemical vapor deposition (MOCVD). The epiwafers will be delivered for developing ultra-high frequency transistors.