Growth of High Power Uvc-Led via Optimized Admittance Diagram

賴, 昆佑 (PI)

Department of Optics and Photonics

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2019
Ultra-flat AlN grown with a pulsed H ₂ etching condition
Huang, C. P., Gupta, K., Liu, C. P. & Lai, K. Y., 1 Jan 2019, In: Applied Physics Express. 12, 1, 015509.
Research output: Contribution to journal › Article › peer-review
4 Scopus citations