Epitaxy and Device Fabrication of 1200 V GaN HEMTs on Si

Project Details


In view of the trend of electrification in automotive and renewable energy sectors, this project aims at the development of 1200 V GaN high electron mobility transistors (HEMTs) on Si substrates for high efficiency power supplies and converters. This project covers the epitaxial growth of GaN-based materials on 6 inch Si substrates using metal-organic chemical vapor deposition (MOCVD), fabrication and testing of power devices, and exploring the potential of B-doped GaN as a buffer layer for GaN HEMTs on Si.
Effective start/end date15/02/2414/02/25

UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 8 - Decent Work and Economic Growth
  • SDG 9 - Industry, Innovation, and Infrastructure


  • GaN
  • High electron mobility transistor
  • Silicon substrate
  • Metal-organic chemical vapor deposition
  • B doped GaN


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