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Effect of LED Die-Attachment on Stress in GaN Eip-Layers and Anelastic Behavior(2/3)
劉, 正毓
(PI)
Department of Chemical and Materials Engineering
Overview
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Research output
(1)
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Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.
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Weight
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Engineering & Materials Science
Aluminum
51%
Crystallinity
11%
Etching
20%
Indium
87%
Masks
9%
Microstructure
12%
Nanorods
100%
Seed
69%
Substrates
20%
Temperature
7%
Tin oxides
92%
Zinc oxide
89%
Physics & Astronomy
aluminum
46%
attachment
13%
crystallinity
6%
etching
11%
indium oxides
66%
ITO (semiconductors)
15%
light emitting diodes
26%
masks
6%
microstructure
8%
nanorods
66%
nuclei
14%
seeds
48%
tin oxides
64%
zinc oxides
64%
Chemical Compounds
Ambient Reaction Temperature
5%
Crystallinity
7%
Dimension
7%
Etching
17%
Hexagonal Space Group
15%
Hydrothermal Method
7%
Microstructure
12%
Nanorod
57%
Surface
6%
Zinc Oxide
65%