Developments and Applications of AI chip by Neuromorphic Computing: Construction of General Neuron-Network Technology Platform and Hetero-Integration of AI Chip in Recognition of Images(1/3)

Hsieh, E-Ray (PI)

Department of Electrical Engineering

2 Conference contribution
1 Article

3 results

2022
A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform
Lin, L. C., Hsieh, E. R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Scopus citations
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnC_FEto Break Great Memory Wall with 10 ns of PGM-pulse, 10¹⁰Cycles of Endurance, and Decade Lifetime at 103 °C
Hsieh, E. R., Chang, J. K., Tang, T. Y., Li, Y. J., Liang, C. W., Lin, M. Y., Huang, S. Y., Su, C. J., Guo, J. C. & Chung, S. S., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 359-360 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2022-June).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3 Scopus citations
2021
A FORMing-Free HfO₂-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability
Hsieh, E. R., Chen, K. T., Chen, P. Y., Wong, S. S. & Chung, S. S., Jun 2021, In: IEEE Transactions on Electron Devices. 68, 6, p. 2699-2704 6 p., 9419727.
Research output: Contribution to journal › Article › peer-review
11 Scopus citations

Developments and Applications of AI chip by Neuromorphic Computing: Construction of General Neuron-Network Technology Platform and Hetero-Integration of AI Chip in Recognition of Images(1/3)

Research output

Search results

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFEto Break Great Memory Wall with 10 ns of PGM-pulse, 1010Cycles of Endurance, and Decade Lifetime at 103 °C

A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability

NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnC_FEto Break Great Memory Wall with 10 ns of PGM-pulse, 10¹⁰Cycles of Endurance, and Decade Lifetime at 103 °C

A FORMing-Free HfO₂-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability