Keyphrases
3-bits
100%
Non-volatile Memory
70%
Hafnium Oxynitride
66%
Storage Capability
66%
MOSFET
66%
Resistive Gate
66%
Cell Storage
66%
HfO2
66%
Gate Metal
66%
Metal-dielectric
46%
Fin Field-effect Transistor (FinFET)
40%
Technology Platform
33%
Network Technology
33%
Neuron Network
33%
Neuromorphic Computing
33%
Image Recognition
33%
AI Applications
33%
AI chip
33%
Hetero-integration
33%
True Randomness
33%
Platform Integration
33%
Random Trap Fluctuation
33%
14nm FinFET
33%
3D Architecture
33%
Physical Unclonable Function
33%
High Density
33%
Negative Bias Temperature Instability
33%
Memory Wall
33%
Drain Current
30%
Top Electrode
20%
Bottom Electrode
17%
Electrode Metal
13%
Dielectric Layer
13%
Resistance Value
13%
Hamming Distance
13%
Conductance
11%
Linearly Tunable
7%
FinFET Devices
7%
Synapse Function
7%
Neuron Function
7%
Circuitry
7%
Activation Function
7%
Gate Electrode
7%
Neuro Network
7%
Program Speed
6%
Entropy Source
6%
Bipolar Operation
6%
Switching Layer
6%
Fowler-Nordheim
6%
Gate Dielectric
6%
Metal Cans
6%
Resistance to Change
6%
Threshold Voltage
6%
Non-volatile
6%
External Voltage
6%
Pulsed Operation
6%
Resistance Switching
6%
High Resistance State
6%
Low Resistance State
6%
Hafnium Oxide
6%
Endurance Cycle
6%
Retention Test
6%
High Performance Computing
6%
Current Variation
6%
Memory Window
6%
Computing Efficiency
6%
3D Integration
6%
Transistor
6%
Capacitance
6%
Bit Error Rate
6%
NIST Tests
6%
Program Efficiency
6%
Memory Hierarchy
6%
Hamming Weight
6%
Ultra-high Density
6%
High Temperature
6%
Lifetime Prediction
6%
Engineering
Nonvolatile Memory
70%
Metal-Oxide-Semiconductor Field-Effect Transistor
66%
Resistive
66%
Dielectrics
46%
Network Technology
33%
Memory Hierarchy
33%
Negative-Bias Temperature Instability
33%
Artificial Intelligence
33%
Current Drain
30%
Dielectric Layer
13%
Hamming Distance
13%
Activation Function
12%
Gate Electrode
8%
Source Entropy
6%
Bipolar Operation
6%
Gate Dielectric
6%
Resistance Change
6%
Applied Voltage
6%
High Resistance State
6%
Applied Stress
6%
Bit Error Rate
6%