Keyphrases
Avalanche Photodiode
83%
Optical Phase Shifter
66%
Vertical-cavity Surface-emitting Laser (VCSEL)
66%
Bipolar Transistor
50%
High-power Performance
50%
Zn Oxide
49%
Zn Diffusion
49%
High Brightness
44%
Low Divergence Angle
42%
Driving Voltage
41%
Wide Dynamic Range
40%
Electric Field (E-field)
38%
Fast Response
38%
Optical Phase Modulator
33%
Temporal Quality
33%
Residual Amplitude Modulation
33%
Free-space Optical Communication
33%
Fiber Spacing
33%
Ultrahigh Responsivity
33%
High Modulation Efficiency
33%
Silicon Photonics
33%
Photonics Foundry
33%
Single Photon Avalanche Diode
33%
Lidar System
33%
Small Power
33%
Frequency-modulated Continuous-wave Lidar
33%
Amplitude Modulation
33%
Power Consumption
33%
Ultra-high
33%
InAlAs
33%
Vertical Cavity Surface Emitting Laser Array
33%
Ranging Performance
33%
System Application
33%
Three-port
33%
InGaAs
33%
Bit Error Ratio
33%
Room Temperature
33%
Oxides
33%
Ultrafast
33%
High Temperature Operation
33%
Top-illuminated
28%
Differential Resistance
27%
Optical Waveguides
25%
Dynamic Operation
25%
Phase Shift
25%
Small Footprint
25%
Refractive Index
25%
Output Current
22%
Gbps
22%
Capacitance Model
22%
High Responsivity
22%
Error-free
22%
Room Temperature Operation
22%
Transmitter
22%
High Power
20%
Parasitic Capacitance
20%
Bias Current
19%
Two-port
19%
High-power Operation
17%
Composite Charge
16%
Saturation Mode
16%
Ideal Diode
16%
Low Power Consumption
16%
Forward Bias
16%
Fast Switching Time
16%
Very Low Power
16%
Injected Current
16%
Mach-Zehnder Modulator
16%
Injected Carriers
16%
Static Power Consumption
16%
Plasma-induced
16%
Port Operations
16%
Device Structure
16%
Operation Window
16%
Propagation Loss
16%
Voltage Swing
16%
N-of-1
16%
Turn-on Voltage
16%
Low Dark Current
16%
Speed-power
16%
Charge Transport Layers
16%
Saturation Current
16%
Limited Bandwidth
15%
Single-mode Output
15%
Dark Count Rate
13%
Avalanche Process
13%
Transimpedance Amplifier
13%
Electric Field Profile
13%
High Performance
12%
M-Layer
12%
LiDAR
11%
Coherent Receiver
11%
Absorbing Layer
11%
Simultaneous Processing
11%
Gain Reduction
11%
Relief Technique
11%
Electrical Bandwidth
11%
Bias Dependence
11%
Receiving End
11%
Weak Light
11%
PIN Photodiode
11%
High Dynamic
11%
Partially Depleted
11%
Local Oscillator
11%
Light Reflection
11%
Space Charge
11%
Nonlinear Behavior
11%
P-type
11%
Threshold Current
11%
Spatial Hole Burning
11%
Burning Effects
11%
Charge Screening
11%
Far-field Pattern
11%
Aperture Size
11%
Optical Spectra
11%
Low Excess Noise
11%
Coherent Lidar
11%
LiDAR Applications
11%
Data Communication
11%
Modulation Bandwidth
11%
Signal Processing
11%
Optical Bandwidth
11%
Laser Cavity
11%
On-off Keying
11%
Transmission Performance
11%
Cavity Structure
11%
Equivalent Circuit Modeling
11%
S-parameters
11%
Modeling Techniques
11%
Available Power
9%
High Available
9%
Power Vertical
9%
2-port
8%
Optical Phase
8%
Efficiency Characteristics
8%
Plasma Effect
8%
Superior Performance
8%
Carrier-induced
8%
Optical Insertion Loss
8%
Device Sizing
8%
Fall Time
8%
Active Mode
8%
Compact Device
8%
Single Photon Detection Efficiency
6%
Afterpulsing
6%
Count Rate Performance
6%
Build Time
6%
Time-correlated Single-photon Counting (TCSPC)
6%
LiDAR Image
6%
Photodiode Receiver
6%
Temporal Features
6%
SN Ratio
6%
3D LiDAR
6%
Responsivity
6%
Gain-bandwidth Product
6%
Ultra High Gain
6%
Detection Performance
6%
Active Area
6%
High Gain
6%
Temporal Response
6%
Avalanche
6%
Dynamic Range
6%
Small Devices
6%
Full Width at Half Maximum
6%
Novel Design
6%
Power Required
6%
Special Design
6%
Ni-P
6%
Photoreceiver
6%
Electric Field Distribution
6%
Bandwidth Degradation
6%
Light Detection
6%
Local Oscillator Power
6%
Breakdown Phenomena
5%
Self-heterodyne
5%
Optical Modulation
5%
Sweeping
5%
Optical Pulse Train
5%
Layer Design
5%
Modulation Depth
5%
Photo-generated
5%
Excellent Performance
5%
Performance Characteristics
5%
Current Performance
5%
High Saturation Power
5%
Optical Alignment
5%
RF Power
5%
Mesostructure
5%
Electric
5%
Edge Breakdown
5%
Engineering
Cavity Surface
100%
Emitting Laser
100%
Avalanche Photodiode
83%
Optical Phase
66%
Phase Shifters
66%
Room Temperature
66%
Bipolar Transistor
55%
Responsivity
55%
Amplitude Modulation
50%
Optical Radar
49%
Dynamic Range
46%
Voltage Driving
44%
Divergence Angle
42%
Electric Field
40%
Bit Error
38%
Response Time
38%
Fast Response
38%
Modulation Efficiency
33%
Free Space
33%
Silicon Photonics
33%
Electric Power Utilization
33%
Phase Modulator
33%
Frequency Modulated Continuous Wave
33%
Indium Gallium Arsenide
33%
High Temperature Operations
33%
Waveguide
27%
Refractive Index
27%
Induced Change
27%
Refractivity
27%
Forward Bias
22%
Current Output
22%
Parasitic Capacitance
20%
Local Oscillator
17%
Aperture Size
16%
Low Power Consumption
16%
Measured Output
16%
Switching Time
16%
Optical Spectrum
16%
Field Pattern
16%
Device Structure
16%
Current Threshold
16%
Power Mode
16%
Propagation Loss
16%
Phase Shift
16%
Limited Bandwidth
15%
Time-of-Flight
14%
Amplifier
13%
Coherent Receiver
11%
Nonlinear Behavior
11%
Emitter Junction
11%
Space Charge
11%
Active Mode
11%
Bias Operation
11%
Receiving End
11%
Compact Device
11%
Insertion Loss
11%
Photodiode
11%
Electrical Bandwidth
11%
Fall Time
11%
Screening Effect
11%
Optical Bandwidth
11%
Scattering Parameters
11%
Equivalent Circuit
11%
Laser Cavity
11%
Sensing System
9%
Time-Correlated Single Photon Counting
8%
Active Area
8%
Detection Performance
8%
Light Detection and Ranging
8%
Field Distribution
8%
Led Process
6%
Gain-Bandwidth Product
6%
Performance Characteristic
5%
Layer Design
5%
Optical Pulse
5%
Pulse Train
5%
Optical Modulation
5%