Development of Millimeter-Wave Integrated Circuits for Active And

This project will develop the RF-frontend key circuits for the millimeter-wave active and passivetarget detection, and the circuits will be implemented using a few advanced 40 nm and 90 nm CMOSprocesses. The frequency window is mainly based on W-band. The maximum RF output power of thetransmitter is higher than 12 dBm. The receiver has a conversion gain of higher than 20 dB and a noise figureof lower than 8 dB. For the active detection, the periodically pulsed carrier signal is transmitted, and thereturned RF signal is received to estimate the distance and velocity between the target and the detector. Forthe passive detection, only the receiver will be operated to receive the background radiation of the target inthe millimeter-wave band. The research topics contain the development of the RF-frontend analysis,millimeter-wave integrated circuits (ICs), and the package technology. The switch, power amplifier, lownoise amplifier, mixer, power detector, broadband amplifier, voltage controlled oscillator, frequency divider,and frequency synthesizer will be designed and studied. The developed circuits will be integrated in theactive and passive RF-frontend transceiver to further reduce the cost and enhance the performance. We willachieve the establishment of the millimeter-wave IC technology, the innovative ICs, the related measurementtechnology, and the high-integrated transceiver. The system planning, IC design, chip layout, fabrication andchip evaluation will be exercised. The design will also be completed and sent to the foundry for fabrication.Final, the measurement and analysis of the developed ICs will be carried out.