This project will develop the RF-frontend highly integrated circuits for the millimeter-wave active and passive target detection, and the circuits will be implemented using a few advanced 90nm and 40 nm CMOS processes. The main and auxiliary frequency windows are Ka and W-band, respectively. The maximum RF output power of the transmitter is higher than 12 dBm. The receiver has a conversion gain of higher than 20 dB and a noise figure of lower than 8 dB. For the active detection, the periodically pulsed carrier signal is transmitted, and the returned RF signal is received to estimate the distance and velocity between the target and the detector. For the passive detection, only the receiver will be operated to receive the background radiation of the target in the millimeter-wave band. In the first year, we have developed several key components, including switch, power amplifier, low noise amplifier, mixer, power detector, broadband amplifier, voltage controlled oscillator, and frequency divider. In the second year, the RF-frontend system will be properly modified based on some simulation, and the millimeter-wave highly integrated circuits (ICs), and the package technology will also continuously developed. The developed circuits will be integrated in the active and passive RF-frontend transceiver to further reduce the cost and enhance the performance. We will achieve the establishment of the millimeter-wave IC technology, the innovative ICs, the related measurement technology, and the high-integrated transceiver. The system planning, IC design, chip layout, fabrication and chip evaluation will be exercised. The design will also be completed and sent to the foundry for fabrication. Final, the measurement and analysis of the developed ICs will be carried out.