In response to the demand of bandwidth of future 5th generation mobile communications, moving the carrier frequency to millimeter wave range has been considered a feasible solution and pursued by several research groups worldwide lately. The power amplifiers in base station of 5 G system are expected to be dominated by GaN-based power transistors, which have the merits of high efficiency as well as high power density. Up to date, GaN power amplifiers based on AlGaN/GaN heterostructure are the products available in the market. However, their performance is limited by the composition and thickness of the AlGaN layer. In this project, we propose an AlInN/GaN heterostructure, which has low stress and high two dimensional electron gas density for high current density operation, to replace the conventional AlGaN/GaN counterpart. Using 0.1 um T-gate high electron mobility transistor on Si substrate as the development vehicle for epitaxy, fabrication and packaging technologies, 10 W Ka-band (30 GHz) power transistors will be demonstrated.
|Effective start/end date
|1/08/16 → 31/07/17
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