Development of Doping Type C-Igzo Transparent Metal Oxide Semiconductors Using High Power Impulse Magnetron Sputtering Method

Project Details

StatusFinished
Effective start/end date1/08/19 → 30/09/20

UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 9 - Industry, Innovation, and Infrastructure

Keywords

  • Metal Oxide Semiconductor Film
  • Doped Crystalline IGZO
  • High Power Impulse Magnetron Sputtering