Development of anti-plasma corrosion film for semiconductor equipment

Increasing the size of wafer, the shrinking of integrated circuit components, andthe increasing number of components per unit area, process yield has alwaysbeen the most important key, and it is also the source of fab profits. The biggestkey to the process yield is the contamination generated in the process. The mainsource of contamination is the metal impurity contamination, particlecontamination and by-product contamination caused by the etching, implantation,and deposition processes of the semiconductor process. Therefore, how toreduce wafer pollution Process contamination and improving process yield areimportant issues for fab profitability. In the etching process, corrosive gas isintroduced into the reaction chamber to form a plasma, and the etching rate iscontrolled by changing the plasma power and the applied bias voltage, but thecorrosion of the plasma gas in the reaction chamber is not an option. In additionto the wafer to be etched, the tube wall, pipeline, and components of the vacuumchamber in the entire ion etching machine are exposed to a corrosive plasmaenvironment for a long time. These non-wafer vacuum components It is easy tobe corroded, and then the surface begins to peel off. The peeled dust or particleswill contaminate the wafer or even cause serious pollution between the wafer andthese dusts, resulting in a decrease in the process yield.With the demand for smaller line widths, the anti-plasma corrosion surfacetreatment technology of yttrium oxide (Y2O3) previously used by atmosphericplasma spraying has been difficult to meet the demand, mainly because thesurface under atmospheric spraying is prone to pores, resulting in easy etchinggas. The reaction causes yttrium oxide (Y2O3) to fall off, causing dust andaffecting the yield. Therefore, the next-generation anti-plasma coating technologyhas become an essential technology for semiconductor equipment factories.The main purpose of this project is to vaporize yttrium oxide (Y2O3), yttriumoxyfluoride (YOF) and yttrium aluminum garnet (YAG) doped rare earth elementmaterials by ion-assisted electron gun deposition to improve the density of thinfilms and develop applications. It is resistant to fluorine plasma etching and hashigh mechanical strength and low stress, so as to improve the difficulties andbottlenecks encountered in the current atmospheric plasma spraying technology.Completed the development of anti-plasma corrosion film, confirmed that theadhesion is 5B , the hardness is greater than 400HV, the thickness is greaterthan 5um, the porosity is less than 3%, the etching rate is less than 150nm/Rfhr,and there is no film cracking phenomenon