Crystalline silicon (c-Si) solar cell has dominated the photovoltaic (PV) industry due to its low cost and well-developed manufacturing process. Recently, tunnel oxide passivated contact (TOPCon) structures have shown excellent surface passivation and their fabrication processes are compatible with existingpassivated emitter and rear cell (PERC) manufacturing processes, which make them a promising alternative to PERC cells. In this project, low damage sputtering technique for fabrication of phosphorous-doped polycrystalline silicon (P-doped poly-Si) thin films will be developed with the purpose of implementing passivation contact structures in TOPCon silicon solar cells. At the first stage of this project, the sputtering process parameters combined with post-annealing will be optimized in order to achieve an optimized dopant concentration and good crystallinity. Next, by adjusting the process parameters in SiOx fabriation and hydrogen plasma process, a poly-Si/SiOx passivation contact with low contact resistivity and low saturation current density could be obtained. Based on theexperimental results, the optimized process steps will be suggested for fabrication of TOPCon solar cells.
|Effective start/end date||1/06/21 → 31/08/22|
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):