Since high power GaN field-effect transistors (FETs) have been considered very promising for future high efficiency power systems, a large number of research teams are devoted to this subject in the last ten years. Although the mainstream AlGaN/GaN FETs perform well, ways of reducing channel resistance is still an important subject for increasing power efficiency. In this project, lattice-matched and low stress AlInN/GaN FETs will be investigated and evaluated for next generation GaN-based power modules. Due to the distinct properties of AlN and InN, the epitaxy technology of AlInN is still immature, especially for those grown on silicon substrates, there contain a lot more dislocations than the ones grown on sapphire or SiC substrates.
|Effective start/end date||1/06/15 → 31/05/16|
- field-effect transistor
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