Engineering & Materials Science
Aluminum nitride
100%
Tin oxides
96%
Sapphire
93%
Oxide films
86%
Etching
75%
Substitution reactions
69%
Thin films
66%
Substrates
49%
Doping (additives)
44%
Annealing
39%
Computer simulation
38%
Valence bands
36%
Temperature
20%
Wet etching
19%
Photoluminescence
16%
Photoelectrons
15%
Masks
13%
Degassing
13%
Spectrum analysis
10%
Impurities
9%
X rays
9%
Physics & Astronomy
aluminum nitrides
79%
tin oxides
67%
computerized simulation
56%
substitutes
55%
thin films
36%
conduction
26%
annealing
24%
valence
14%
outgassing
12%
simulation
11%
spectrum analysis
9%
photoelectrons
9%
temperature
8%
photoluminescence
7%
impurities
6%
causes
6%
Chemical Compounds
Tin Oxide
75%
Etching
63%
Pyramidal Crystal
47%
Simulation
44%
Substitution Reaction
44%
Annealing
31%
Valence Band
22%
Doping Material
17%
Degasification
12%
X-Ray Photoelectron Spectrum
11%
Photoluminescence
7%