半導體設備之抗電漿腐蝕薄膜開發

ncreasing the size of wafer, the shrinking of integrated circuit components, and the increasing number of components per unit area, process yield has always been the most important key, and it is also the source of fab profits. The biggest key to the process yield is the contamination generated in the process. The main source of contamination is the metal impurity contamination, particle contamination and by-product contamination caused by the etching, implantation, and deposition processes of the semiconductor process. Therefore, how to reduce wafer pollution Process contamination and improving process yield are important issues for fab profitability. In the etching process, corrosive gas is introduced into the reaction chamber to form a plasma, and the etching rate is controlled by changing the plasma power and the applied bias voltage, but the corrosion of the plasma gas in the reaction chamber is not an option. In addition to the wafer to be etched, the tube wall, pipeline, and components of the vacuum chamber in the entire ion etching machine are exposed to a corrosive plasma environment for a long time. These non-wafer vacuum components It is easy to be corroded, and then the surface begins to peel off. The peeled dust or particles will contaminate the wafer or even cause serious pollution between the wafer and these dusts, resulting in a decrease in the process yield.With the demand for smaller line widths, the anti-plasma corrosion surface treatment technology of yttrium oxide (Y2O3) previously used by atmospheric plasma spraying has been difficult to meet the demand, mainly because the surface under atmospheric spraying is prone to pores, resulting in easy etching gas. The reaction causes yttrium oxide (Y2O3) to fall off, causing dust and affecting the yield. Therefore, the next-generation anti-plasma coating technology has become an essential technology for semiconductor equipment factories. The main purpose of this project is to vaporize yttrium oxide (Y2O3), yttrium oxyfluoride (YOF) and yttrium aluminum garnet (YAG) doped rare earth element materials by ion-assisted electron gun deposition to improve the density of thin films and develop applications. It is resistant to fluorine plasma etching and has high mechanical strength and low stress, so as to improve the difficulties and bottlenecks encountered in the current atmospheric plasma spraying technology. Completed the development of anti-plasma corrosion film, confirmed that the adhesion is 5B , the hardness is greater than 400HV, the thickness is greater than 5um, the porosity is less than 3%, the etching rate is less than 150nm/Rfhr, and there is no film cracking phenomenon