Research output per year
Research output per year
Search results
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2023
A 40-nm Loadless 4T-SRAM TRNG MACRO with Read-just-after-write (RAW) Scheme Featuring 5.3Gb/s and 3.64TOP/W
Wu, Y. S., Chang, K. H., Huang, P. S., Miu, M. L., Huang, S. Y., Lu, S. M., Su, H. S. & Hsieh, E. R., 2023, 2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., p. 111-112 2 p. (2023 Silicon Nanoelectronics Workshop, SNW 2023).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
Hsieh, E. R., Hsueh, Y. L., Lin, R. Q., Huang, Y. X., Hou, P. J., Chang, K. H., Shen, T. H., Li, Y. H. & Lyu, R. Y., 1 Aug 2023, In: IEEE Electron Device Letters. 44, 8, p. 1292-1295 4 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
2022
Emulator of Gene Mutation: Interfering True Random Number Generators Using Resistive-Gate Non-Volatile-Memories
Hsieh, E. R., Huang, P. H., Miu, M. L., Huang, S. Y., Lu, S. M. & Lyu, R. Y., 1 Nov 2022, In: IEEE Electron Device Letters. 43, 11, p. 1870-1873 4 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
2021
An embedded three-bit-per-cell two-transistors and one-ferroelectric-capacitance nonvolatile memory
Hsieh, E. R., Wang, Z. Y., Huang, C. F. & Wu, Y. S., Oct 2021, In: IEEE Electron Device Letters. 42, 10, p. 1460-1463 4 p.Research output: Contribution to journal › Article › peer-review
4 Scopus citations -
A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic
Ray Hsieh, E., Huang, Y. X., Ye, Y. H. & Wang, Z. Y., Dec 2021, In: Semiconductor Science and Technology. 36, 12, 124002.Research output: Contribution to journal › Article › peer-review
5 Scopus citations -
The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators
Hsieh, E. R., Tsai, W. L., Lin, Y. L., Liu, C. H., Chung, S. S., Tang, Y. T., Su, J. R., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2021, 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2021-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3 Scopus citations