Keyphrases
Non-volatile Memory
100%
Resistive Gate
66%
Conductance
44%
Autoinducer-2 (AI-2)
33%
4T SRAM
33%
Loadless
33%
Transistor
33%
Rectified Linear Unit (ReLU)
33%
Inference Accelerator
33%
Electrical Synapse
33%
Capacitance
33%
MOSFET
33%
Sense Amplifier
33%
Gate Field Effect
33%
Ternary Content Addressable Memory
33%
Non-volatile
33%
Low Power
33%
Emulator
33%
High Performance
33%
True Random number Generator
33%
Random Bits
33%
Gene mutation
33%
Electrical Activation
33%
Field-effect Transistors
33%
Current Flow
33%
Resistive Random Access Memory (ReRAM)
33%
Hamming Distance
19%
Hamming Weight
19%
Endurance Cycle
19%
Conductance States
17%
Threshold Voltage
14%
High Resistance State
12%
Memory Window
11%
On-off Ratio
11%
Autotest
11%
Celsius
11%
Negative Value
11%
Embedded Nonvolatile Memory (eNVM)
11%
Pulsed Operation
11%
Very Deep Neural Network
11%
Indian Institute of Technology
11%
National Institute of Standards
11%
Strong Potential
11%
SN Ratio
11%
Current Reference
11%
Resistive State
11%
Disturbance Estimation
11%
Cryptographic
11%
Output Current
11%
Autocorrelation
11%
Inference Accuracy
11%
Low Resistance State
9%
Storage Level
8%
Timed Tests
8%
Controller
8%
SRAM Cell
8%
Failure Time
8%
Accelerated Testing
8%
Bit Error Rate
8%
CMOS Technology
8%
Bandwidth Enhancement
8%
Cell Storage
8%
Energy Efficiency
8%
Don't Care
8%
Good Quality
8%
Data Matching
8%
2-bit
8%
Gate Dielectric
6%
Engineering
Nonvolatile Memory
100%
Resistive
66%
Hamming Distance
44%
Energy Conservation
33%
Random Number
33%
Current Flow
33%
Energy Efficiency
33%
Sense Amplifier
33%
Field-Effect Transistor
33%
Linear Unit
33%
Bit Error Rate
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Resistive Random Access Memory
33%
High Resistance State
12%
Ten Year
11%
Degree Celsius
11%
Negative Value
11%
Current Reference
11%
Deep Neural Network
11%
Gate Dielectric
9%
Nanosecond
6%