以對稱鍵合結構抵銷熱應力實現異質材料晶圓鍵合及薄膜轉移之研究

Project Details

Description

Due toe lattice mismatch (>5%), it is not possible to directly epitaxy a no point defects, no dislocations, perfect crystallization thin film. Hence, this study will propose a research plan to cut and transfer a thin film from a substrate onto another dissimilar material substrate. In performing the dissimilar material wafer bonding, the key is to avoid the huge thermal stresses that will destruct the bonded wafer pair during the cooling period generated in the annealing step for enhancing the bonding strength.
StatusFinished
Effective start/end date1/08/1531/07/16

Keywords

  • Wafer Bonding
  • Smart-Cut process
  • GaAs on Si
  • Direct Wafer Bonding
  • Thermal StressesCancelation

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