Due toe lattice mismatch (>5%), it is not possible to directly epitaxy a no point defects, no dislocations, perfect crystallization thin film. Hence, this study will propose a research plan to cut and transfer a thin film from a substrate onto another dissimilar material substrate. In performing the dissimilar material wafer bonding, the key is to avoid the huge thermal stresses that will destruct the bonded wafer pair during the cooling period generated in the annealing step for enhancing the bonding strength.
|Effective start/end date||1/08/15 → 31/07/16|
- Wafer Bonding
- Smart-Cut process
- GaAs on Si
- Direct Wafer Bonding
- Thermal StressesCancelation
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.