Keyphrases
AlGaAs
15%
AlGaN-GaN
41%
AlSb
15%
CMOS Technology
14%
Common Source
10%
Composite Collector
8%
Conversion Gain
10%
Current Gain
14%
DC Characteristics
11%
Device Characteristics
26%
Double Heterojunction Bipolar Transistor
13%
Drain Current
12%
Dual Gate
12%
Enhancement-mode (E-mode)
11%
Flip chip
20%
Frequency Doubler
14%
GaAs HBT
18%
GaAs pHEMT
12%
GaAsSb
11%
GaInP
14%
Gallium Arsenide
65%
GaN Cap Layer
10%
GaN HEMT
49%
GaN Heterostructure
11%
Heterojunction Bipolar Transistors
56%
Heterostructure Field-effect Transistors
13%
High Efficiency
17%
High Electron Mobility Transistor
15%
I-V Characteristics
9%
InGaAs
13%
InGaP
27%
InGaP-GaAs Heterojunctions
11%
InP HEMT
18%
Ka-band
15%
Low-frequency Noise
10%
MESFET
9%
Normally-off
9%
Off-state
9%
On-resistance
9%
P-GaN
37%
Photodiode
26%
Power Amplifier
16%
Power Output
14%
Pseudomorphic
9%
Schottky
9%
Schottky Gate
9%
Si Photodiode
14%
Small-signal Model
9%
Standard CMOS Technology
10%
Temperature Effect
12%
Engineering
Aluminium Gallium Arsenide
19%
Band Gap
12%
Bipolar Transistor
72%
Breakdown Voltage
19%
Buffer Layer
10%
Cap Layer
10%
Conversion Gain
12%
Current Collector
7%
Current Drain
23%
Current Gain
27%
Current-Voltage Characteristic
9%
Cutoff Frequency
10%
Db Bandwidth
7%
Db Compression Point
6%
Direct Current
6%
Electric Network Topology
6%
Electric Power Utilization
10%
Epitaxial Film
6%
Field-Effect Transistor
27%
Figure of Merit
6%
Frequency Noise
17%
Gallium Arsenide
99%
Gate Bias
7%
Gate Length
7%
Gate Width
9%
Harmonics
11%
Heterojunctions
100%
Indium Gallium Arsenide
17%
Input Power
8%
Ka-Band
18%
Low Noise Amplifier
6%
Low-Temperature
7%
Millimeter Wave
11%
Ohmic Contacts
9%
Oscillator
13%
Output Power
29%
Passivation
8%
Photodiode
35%
Power Amplifier
16%
Responsivity
9%
Reverse Bias
7%
Schottky Barrier Diode
6%
Sheet Resistance
6%
Signal Model
7%
Stress State
7%
System-in-Package
10%
Temperature Dependence
10%
Transients
6%
V-Band
7%
W-Band
8%
