Keyphrases
Gallium Arsenide
64%
Heterojunction Bipolar Transistors
55%
GaN HEMT
48%
AlGaN-GaN
40%
P-GaN
37%
InGaP
27%
Photodiode
26%
Device Characteristics
26%
Flip chip
20%
InP HEMT
18%
GaAs HBT
18%
High Efficiency
17%
Power Amplifier
16%
High Electron Mobility Transistor
15%
AlSb
15%
Ka-band
15%
AlGaAs
14%
Current Gain
14%
GaInP
14%
CMOS Technology
14%
Frequency Doubler
14%
Power Output
14%
Si Photodiode
13%
Double Heterojunction Bipolar Transistor
13%
InGaAs
13%
Heterostructure Field-effect Transistors
12%
Temperature Effect
12%
GaAs pHEMT
12%
Dual Gate
11%
Drain Current
11%
InGaP-GaAs Heterojunctions
11%
DC Characteristics
11%
GaN Heterostructure
11%
Enhancement-mode (E-mode)
11%
GaAsSb
10%
Conversion Gain
10%
GaN Cap Layer
10%
Low-frequency Noise
10%
Standard CMOS Technology
9%
Common Source
9%
Off-state
9%
On-resistance
9%
Normally-off
9%
Schottky Gate
9%
Schottky
9%
MESFET
9%
Pseudomorphic
9%
Small-signal Model
9%
I-V Characteristics
8%
Composite Collector
8%
Engineering
Heterojunctions
100%
Gallium Arsenide
98%
Bipolar Transistor
72%
Photodiode
34%
Output Power
31%
Current Gain
27%
Field-Effect Transistor
26%
Current Drain
23%
Breakdown Voltage
19%
Ka-Band
19%
Aluminium Gallium Arsenide
19%
Indium Gallium Arsenide
17%
Frequency Noise
16%
Power Amplifier
16%
Millimeter Wave
12%
Conversion Gain
12%
Harmonics
10%
Cutoff Frequency
10%
Temperature Dependence
10%
Electric Power Utilization
10%
System-in-Package
10%
Cap Layer
10%
Buffer Layer
10%
Current-Voltage Characteristic
9%
Input Power
9%
Ohmic Contacts
9%
Gate Width
9%
Responsivity
8%
W-Band
8%
Passivation
8%
Current Collector
8%
Electric Network Topology
7%
Stress State
7%
Signal Model
7%
Gate Length
7%
Reverse Bias
7%
Gate Bias
7%
V-Band
7%
Db Bandwidth
7%
Low-Temperature
7%
Output Signal
6%
Db Compression Point
6%
Transients
6%
Epitaxial Layer
6%
Low Noise Amplifier
6%
Schottky Barrier Diode
6%
Sheet Resistance
6%
Figure of Merit
6%
Collector Junction
6%
Amplifier
6%
