Engineering & Materials Science
Heterojunction bipolar transistors
100%
High electron mobility transistors
77%
Photodiodes
32%
Heterojunctions
23%
Drain current
21%
Bandwidth
20%
Doping (additives)
19%
Leakage currents
17%
Frequency doublers
16%
Electric breakdown
16%
Capacitance
15%
Substrates
15%
Field effect transistors
15%
Power amplifiers
13%
Chemical beam epitaxy
13%
Ion implantation
11%
Transistors
11%
System-in-package
11%
Metals
10%
Millimeter waves
10%
Temperature
10%
Threshold voltage
9%
Cutoff frequency
9%
Electric potential
9%
Wavelength
9%
Transconductance
9%
Electric network topology
8%
Electrons
8%
Silicon
8%
Energy gap
8%
Buffer layers
8%
Passivation
8%
Electric power utilization
8%
Gates (transistor)
8%
Ohmic contacts
7%
Capacitance measurement
7%
Phase noise
7%
Networks (circuits)
7%
Hole mobility
6%
MESFET devices
6%
Bipolar transistors
6%
Avalanche photodiodes
6%
Composite materials
6%
Integrated optoelectronics
6%
Aluminum oxide
6%
Semiconductor materials
6%
Iridium
6%
Metallorganic chemical vapor deposition
6%
Tunnel field effect transistors
6%
Fabrication
6%
Physics & Astronomy
bipolar transistors
37%
heterojunctions
35%
high electron mobility transistors
24%
photodiodes
22%
CMOS
18%
field effect transistors
18%
accumulators
17%
chips
13%
emitters
12%
performance
9%
bandwidth
9%
output
9%
aluminum gallium arsenides
8%
high speed
7%
epitaxy
7%
electric contacts
7%
capacitance
7%
etching
6%
leakage
6%
MIS (semiconductors)
6%
composite materials
6%
broadband
6%
direct current
5%
implantation
5%
saturation
5%
electric potential
5%
characterization
5%
Chemical Compounds
Current Gain
39%
Drain Current
29%
Breakdown Voltage
22%
Leakage Current
19%
Transconductance
16%
Electron Mobility
15%
Voltage
14%
Field Effect
14%
Schottky Barrier
9%
Chemical Beam Epitaxy
8%
Ion Implantation
7%
Buffer Solution
7%
Simulation
6%
Composite Material
6%
Etching
5%
Time
5%
Length
5%
Chemical Passivation
5%
Communication
5%
