Projects per year
Personal profile
Research Expertise
Compound Semiconductor/Solid State Engineering and Components
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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高效率高頻高積體化轉換器研發-總計畫暨子計畫一：氮化鎵材料之磊晶開發和元件可靠度分析與模型建立(2/2)
Hsin, Y.-M. (PI)
1/05/21 → 31/07/22
Project: Research
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高效率高頻高積體化轉換器研發-大型儀器(總計畫)--高電壓高電流功率元件動態量測(氮化鎵材料之磊晶開發和元件可靠度分析與模型建立)
Hsin, Y.-M. (PI)
1/05/20 → 31/10/21
Project: Research
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A Novel Embedded p-GaN Resistor Design in p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors for Enhanced Performance
Hsin, Y. M., Tseng, Y. C., Wu, C. H., Wang, Y. W. & Yan, J. Y., 2025, (Accepted/In press) In: Physica Status Solidi (A) Applications and Materials Science.Research output: Contribution to journal › Article › peer-review
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An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics
Sriramadasu, K. S. & Hsin, Y. M., Jan 2024, In: ECS Journal of Solid State Science and Technology. 13, 1, 015004.Research output: Contribution to journal › Article › peer-review
3 Scopus citations -
A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation
Sriramadasu, K. S. & Hsin, Y. M., 1 Mar 2024, In: Japanese Journal of Applied Physics. 63, 3, 031005.Research output: Contribution to journal › Article › peer-review
Open Access -
A Pseudo-Junction Barrier Schottky Diode in p-GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers
Sriramadasu, K. S. & Hsin, Y. M., Jul 2024, In: Physica Status Solidi (A) Applications and Materials Science. 221, 13, 2300540.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT
Chen, W. C., Lo, H. H. & Hsin, Y. M., May 2024, In: ECS Journal of Solid State Science and Technology. 13, 5, 055003.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations