Projects per year
Personal profile
Research Expertise
Compound Semiconductor/Solid State Engineering and Components
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Performance of an E-mode AlGaN/GaN High-Electron-Mobility Transistor Integrated with a Current Limiting Diode
Hsin, Y. M., Zhong, Y. N., Lai, Y. C. & Tsai, K. H., Aug 2023, In: ECS Journal of Solid State Science and Technology. 12, 8, 085003.Research output: Contribution to journal › Article › peer-review
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Recessed-gate AlGaN/GaN MIS-FETs with dual 2DEG channels
Hsu, H. C., Xie, H. G. & Hsin, Y. M., Feb 2023, In: Semiconductor Science and Technology. 38, 2, 025004.Research output: Contribution to journal › Article › peer-review
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A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics
Tsai, M. H., Tsai, C. J., You, X. R. & Hsin, Y. M., 2022, p. 251-254. 4 p.Research output: Contribution to conference › Paper › peer-review
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Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias
Qin, Z. W., Chen, W. C., Lo, H. H. & Hsin, Y. M., Aug 2022, In: ECS Journal of Solid State Science and Technology. 11, 8, 085004.Research output: Contribution to journal › Article › peer-review
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High-performance normally-off recessed tri-gate GaN MIS-FETs in micrometer scale
Tsai, C. J., You, X. R., Tsai, M. H. & Hsin, Y. M., Jan 2022, In: Semiconductor Science and Technology. 37, 1, 015002.Research output: Contribution to journal › Article › peer-review
3 Scopus citations