Projects per year
Personal profile
Research Expertise
Compound Semiconductor/Solid State Engineering and Components
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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高效率高頻高積體化轉換器研發-大型儀器(總計畫)--高電壓高電流功率元件動態量測(氮化鎵材料之磊晶開發和元件可靠度分析與模型建立)
1/05/20 → 31/10/21
Project: Research
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Gan Epitaxial Development, Devices Reliability and Modeling( II )
1/05/19 → 31/05/20
Project: Research
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高效率高頻高積體化轉換器/換流器研發-大型儀器(總計畫)：高電壓高電流變溫測量針座台(氮化鎵材料之磊晶開發和元件可靠度分析與模型建立)
1/05/18 → 30/04/19
Project: Research
Research output
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High-performance normally-off recessed tri-gate GaN MIS-FETs in micrometer scale
Tsai, C. J., You, X. R., Tsai, M. H. & Hsin, Y. M., Jan 2022, In: Semiconductor Science and Technology. 37, 1, 015002.Research output: Contribution to journal › Article › peer-review
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I-V Characteristics of E-mode GaN-based transistors under gate floating
Qin, Z. W., Tsai, W. H., Chen, W. C., Lo, H. H. & Hsin, Y. M., Apr 2022, In: Semiconductor Science and Technology. 37, 4, 045002.Research output: Contribution to journal › Article › peer-review
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DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths
Yang, S. S. & Hsin, Y. M., 25 Aug 2021, 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs
Tsai, W. S., Qin, Z. W. & Hsin, Y. M., Dec 2021, In: ECS Journal of Solid State Science and Technology. 10, 12, 125003.Research output: Contribution to journal › Article › peer-review
Open Access -
Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias
Lai, Y. C., Zhong, Y. N., Tsai, M. Y. & Hsin, Y. M., Mar 2021, In: Journal of Electronic Materials. 50, 3, p. 1162-1166 5 p.Research output: Contribution to journal › Article › peer-review
Open Access