Engineering & Materials Science
Annealing
15%
Bias voltage
14%
Capacitance
27%
Chemical activation
5%
Chemical potential
5%
Computer simulation
6%
Data storage equipment
14%
Doping (additives)
12%
Durability
11%
Electric potential
11%
Electrodes
8%
Electron devices
11%
Electron-phonon interactions
15%
Ferroelectric materials
100%
Ferroelectric RAM
19%
Ferroelectricity
12%
Field effect transistors
57%
FinFET
24%
Fluorescence
8%
Gate dielectrics
5%
Gold
5%
Hafnium
6%
Interfacial energy
9%
Internet of things
6%
Ions
18%
Metals
18%
Molecular dynamics
10%
Molecules
7%
Monolayers
6%
Nanorods
7%
Nanowires
9%
Nitrides
9%
Perovskite
5%
Phase transitions
19%
Phonons
19%
Plasmas
6%
Polarization
9%
Qubits
10%
Rapid thermal annealing
5%
Silicides
5%
Silicon
5%
Static random access storage
8%
Temperature
10%
Transistors
23%
Transition metals
5%
Tuning
6%
Chemical Compounds
Ambient Reaction Temperature
8%
Annealing
5%
Antiferroelectricity
8%
Capacitor
11%
Conductance
9%
Dielectric Material
8%
Electron-Phonon Interaction
12%
Field Effect
24%
Hysteresis
7%
Implant
7%
Ion
8%
Laser Annealing
6%
Metal
7%
Nanowire
6%
Parasitic
9%
Phonon
6%
Polarization
15%
Quantum Dot
15%
Simulation
11%
Strain
10%
Tetragonal Space Group
8%
Tunneling
9%
Voltage
23%
Physics & Astronomy
bandwidth
5%
capacitance
8%
capacitors
5%
cells
5%
CMOS
9%
cycles
6%
electric potential
10%
electrodes
7%
electron phonon interactions
8%
endurance
13%
engineering
7%
field effect transistors
26%
fins
11%
hafnium oxides
5%
ions
7%
metal nitrides
10%
metals
8%
nanowires
6%
phase transformations
6%
phonons
7%
polarization
5%
quantum dots
7%
room temperature
6%
spacing
5%
submerging
7%
transistors
15%
transition metals
6%
wakes
9%
