Keyphrases
HfZrOx
40%
Interfacial Layer
34%
HfO2
28%
Ioff
26%
Fin Field-effect Transistor (FinFET)
24%
Carbon Nanotube Field Effect Transistor (CNTFET)
24%
Sub-60 mV/dec
24%
Molybdenite
21%
Ferroelectric Field-effect Transistor (FeFET)
21%
Subthreshold Swing
20%
Transistor
20%
Zirconium Dioxide
19%
Wake-up
19%
Memory Window
19%
In-memory
18%
Bias Dependence
18%
Phonons
18%
Highly Reliable
18%
Angstrom
18%
Ferroelectric Capacitor
18%
Conductance
17%
Gate Stack
16%
Metal Gate
16%
Tunneling Rate
15%
Electron-phonon Interaction
15%
Energy Efficient
15%
Quantum Dots
15%
Low Temperature
15%
Storage Capacity
15%
Double Quantum Dot
14%
Technology Node
14%
High Performance
14%
Ferroelectric HZO
14%
HfZrO2
13%
Gate Engineering
12%
Negative Capacitance
12%
Orthorhombic
12%
Ferroelectric Layer
12%
Single-molecule Transistor
12%
Hybrid Implants
12%
Fin Type
12%
Plasma Immersion
12%
Doping Technique
12%
Dielectric Layer
12%
Bias Effect
12%
Ion Implantation
12%
Tunable Size
12%
Aluminum Oxide
12%
Sub-5-nm Node
12%
Ferroelectric Dielectric
12%
Engineering
Field Effect Transistor
49%
Engineering
37%
Nodes
31%
Quantum Dot
28%
Interfacial Layer
26%
Gate Stack
24%
Room Temperature
18%
Inverter
18%
Tunnel Construction
18%
Side Wall
14%
Phonon Interaction
12%
Effective Stress Method
12%
Field-Effect Transistor
12%
Qubit
12%
Electron Devices
12%
Dielectric Layer
12%
Low-Temperature
12%
Single Electron
12%
Strain Effect
12%
Nanowire
12%
Internet-Of-Things
12%
Plasma Treatment
12%
Storage Capacity
12%
Bias Voltage
11%
Superlattice
10%
Operating Voltage
9%
Subthreshold Slope
9%
Implant
8%
Rapid Thermal Annealing
7%
Experimental Observation
7%
Monoclinic
7%
Data Retention
7%
Atomistic Simulation
6%
Linear Unit
6%
Aluminum Oxide
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
6%
Thermal Conductivity
6%
Optimization Strategy
6%
Metal Layer
6%
Far-Infrared Laser
6%
Dielectrics
6%
Crystallinity
6%
Interdiffusion
6%
Area Overhead
6%
Gate Length
6%
Electric Field
6%
Barrier Layer
6%
Nanosheet
6%
Design Guideline
6%
Reliability Issue
6%
Material Science
Ferroelectric Material
100%
Field Effect Transistor
83%
Quantum Dot
49%
Transistor
47%
Capacitance
39%
Zirconia
24%
Dielectric Material
19%
Nanowire
18%
Annealing
16%
Transition Metal Dichalcogenide
12%
Single Electron Devices
12%
Germanium
12%
Gallium
12%
Indium
12%
Zinc Oxide
12%
Aluminum Oxide
12%
Capacitor
12%
Silicide
9%
Density
8%
Monolayers
8%
Aluminum Nitride
6%
Aluminum Oxynitride
6%
Epitaxy
6%
Hafnium
6%
Carbon Dioxide
6%
Electronic Circuit
6%
Doping (Additives)
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
6%
Thermal Conductivity
6%
Photoemission Spectroscopy
5%
Oxide Compound
5%
Thin Films
5%
Grain Size
5%
