Keyphrases
HfZrOx
38%
Interfacial Layer
32%
Memory Window
30%
Ferroelectric Field-effect Transistor (FeFET)
29%
Ioff
24%
Gate Engineering
23%
Negative Capacitance
23%
Fin Field-effect Transistor (FinFET)
23%
Orthorhombic
23%
Carbon Nanotube Field Effect Transistor (CNTFET)
23%
Sub-60 mV/dec
23%
Molybdenite
20%
Phase Transition
20%
First-principles Calculations
20%
Orthorhombic Phase
19%
Subthreshold Swing
19%
Transistor
19%
Ferroelectric Memory
19%
In-memory
17%
Bias Dependence
17%
Phonons
17%
Antiferroelectric
17%
Highly Reliable
17%
Angstrom
17%
Ferroelectric Polarization
17%
Conductance
16%
Monoclinic
15%
High Strain
15%
Gate Stack
15%
Phase Transformation
15%
Metal Gate
15%
Gate Electric Field
15%
Dielectric Thickness
15%
Tunneling Rate
14%
Electron-phonon Interaction
14%
Energy Efficient
14%
Quantum Dots
14%
Low Temperature
14%
Wake-up
14%
High Performance
13%
Ferroelectric HZO
13%
Ferroelectric Capacitor
13%
Ferroelectric Layer
11%
Single-molecule Transistor
11%
Hybrid Implants
11%
Fin Type
11%
Ferroelectric Transition
11%
Plasma Immersion
11%
Metal Nitrides
11%
Strain-induced Transformation
11%
Engineering
Field Effect Transistor
47%
Engineering
35%
Quantum Dot
26%
Interfacial Layer
25%
Gate Stack
23%
Energy Engineering
23%
Nodes
17%
Room Temperature
17%
Tunnel Construction
17%
Side Wall
14%
Phonon Interaction
11%
Effective Stress Method
11%
Field-Effect Transistor
11%
Qubit
11%
Electron Devices
11%
Dielectric Layer
11%
Low-Temperature
11%
Single Electron
11%
Strain Effect
11%
Nanowire
11%
Internet-Of-Things
11%
Bias Voltage
11%
Operating Voltage
8%
Subthreshold Slope
8%
Implant
8%
Rapid Thermal Annealing
7%
Experimental Observation
7%
Atomistic Simulation
5%
Linear Unit
5%
Aluminum Oxide
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Optimization Strategy
5%
Metal Layer
5%
Far-Infrared Laser
5%
Monoclinic
5%
Dielectrics
5%
Crystallinity
5%
Interdiffusion
5%
Area Overhead
5%
Gate Length
5%
Data Retention
5%
Electric Field
5%
Inverter
5%
Barrier Layer
5%
Material Science
Ferroelectric Material
100%
Field Effect Transistor
79%
Transistor
57%
Quantum Dot
41%
Capacitance
39%
Dielectric Material
20%
Nanowire
17%
Transition Metal Dichalcogenide
11%
Annealing
11%
Nitride Compound
11%
Single Electron Devices
11%
Zirconia
11%
Silicide
8%
Density
8%
Monolayers
8%
Capacitor
7%
Germanium
5%
Aluminum Oxide
5%
Aluminum Nitride
5%
Aluminum Oxynitride
5%
Epitaxy
5%
Hafnium
5%
Carbon Dioxide
5%
Al2O3
5%
Electronic Circuit
5%
Doping (Additives)
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
