Projects per year
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Research Expertise
Semiconductor high-dielectric materials, emerging semiconductor material computing, silicon-based quantum computer component simulation
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Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T. & Lee, M. H., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Van der Waals epitaxy of 2D h -AlN on TMDs by atomic layer deposition at 250 °c
Chang, S. J., Wang, S. Y., Huang, Y. C., Chih, J. H., Lai, Y. T., Tsai, Y. W., Lin, J. M., Chien, C. H., Tang, Y. T. & Hu, C., 18 Apr 2022, In: Applied Physics Letters. 120, 16, 162102.Research output: Contribution to journal › Article › peer-review
Open Access2 Scopus citations -
Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation
Tang, Y. T., Wu, T. M., Fan, C. L., Lai, Y. M., Hsiang, K. Y., Liao, C. Y., Chang, S. H., Yu, T. Y., Su, P., Chang, M. T., Huang, B. H., Hu, C., Chang, S. J., Chang, M. F. & Lee, M. H., 25 Aug 2021, 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM
Lin, Y. D., Yeh, P. C., Tang, Y. T., Su, J. W., Yang, H. Y., Chen, Y. H., Lin, C. P., Yeh, P. S., Chen, J. C., Tzeng, P. J., Lee, M. H., Hou, T. H., Sheu, S. S., Lo, W. C. & Wu, C. I., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 6.4.1-6.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2021-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
Chen, Y. C., Hsiang, K. Y., Tang, Y. T., Lee, M. H. & Su, P., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 15.4.1-15.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2021-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review